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AS6C3216A-55BIN Hoja de datos - Alliance Semiconductor

AS6C3216A-55BIN image

Número de pieza
AS6C3216A-55BIN

componentes Descripción

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page
11 Pages

File Size
599.2 kB

Fabricante
ALSC
Alliance Semiconductor ALSC

GENERAL DESCRIPTION
The AS6C3216A-55BIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.


FEATURE
■ Fast access time : 55ns
■ Low power consumption:
    Operating current : 12mA (TYP.)
    Standby current : 8µA (TYP.)
■ Single 2.7V ~ 3.6V power supply
■ All inputs and outputs TTL compatible
■ Fully static operation
■ Tri-state output
■ Data byte control : LB# (DQ0 ~ DQ7)
                                 UB# (DQ8 ~ DQ15)
■ Data retention voltage : 1.2V (MIN.)
■ ROHS Compliant
■ Package : 48-ball 8mm x 10mm TFBGA

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Número de pieza
componentes Descripción
PDF
Fabricante
2048K X 8 BIT LOW POWER CMOS SRAM
Ver
Lyontek Inc.
2048K X 8 BIT LOW POWER CMOS SRAM ( Rev : 2011 )
Ver
Lyontek Inc.
2048K X 8 BIT LOW POWER CMOS SRAM ( Rev : 2016 )
Ver
Lyontek Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
Ver
ON Semiconductor
2048k Nonvolatile SRAM
Ver
Maxim Integrated
2048k Nonvolatile SRAM ( Rev : 2010 )
Ver
Maxim Integrated
2048k Nonvolatile SRAM
Ver
Maxim Integrated
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
Ver
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
Ver
ON Semiconductor
2048k Nonvolatile SRAM
Ver
Dallas Semiconductor -> Maxim Integrated

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