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N08L1618C2A Hoja de datos - NanoAmp Solutions, Inc.

N08L1618C2AB image

Número de pieza
N08L1618C2A

Other PDF
  no available.

PDF
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page
10 Pages

File Size
178.6 kB

Fabricante
NANOAMP
NanoAmp Solutions, Inc. NANOAMP

Overview
The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low power.


FEATUREs
• Single Wide Power Supply Range
  1.65 to 2.2 Volts
• Very low standby current
  0.5µA at 1.8V (Typical)
• Very low operating current
  1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
  0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
  Dual Chip Enables (CE1and CE2)
  Byte control for independent byte operation
  Output Enable (OE) for memory expansion
• Low voltage data retention
   Vcc = 1.2V
• Very fast output enable access time
  25ns OEaccess time
• Very fast Page Mode access time
  tAAP = 25ns
• Automatic power down to standby mode
• TTL compatible three-state output driver

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
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NanoAmp Solutions, Inc.

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