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BAV170 Hoja de datos - NXP Semiconductors.

BAV170 image

Número de pieza
BAV170

componentes Descripción

Other PDF
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PDF
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page
10 Pages

File Size
206.4 kB

Fabricante
NXP
NXP Semiconductors. NXP

DESCRIPTION
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration.


FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.


APPLICATION
• Low-leakage current applications in surface mounted circuits.

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