BFP650(2004) Hoja de datos - Infineon Technologies
Número de pieza
BFP650
componentes Descripción
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Infineon Technologies
NPN Silicon Germanium RF Transistor
Preliminary data
• For high power amplifiers
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology
Número de pieza
componentes Descripción
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