DESCRIPTION
The BS616LV2019 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum CMOS standby current of 3/5uA at 3V at 70/85°C and maximum access time of 55/70ns.

FEATURES
• Wide VCC operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
    VCC = 3.0V Operation current : 25mA (Max.) at 55ns
                                                       2mA (Max.) at 1MHz
                        Standby current : 3/5uA (Max.) at 70/85°C
• High speed access time :
    -55 55ns(Max.) at VCC=2.7~3.6V
    -70 70ns(Max.) at VCC=2.4~3.6V
• Automatic power down when chip is deselected
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin.
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V