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BS616UV4016DCP10 Hoja de datos - Brilliance Semiconductor

BS616UV4016 image

Número de pieza
BS616UV4016DCP10

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page
10 Pages

File Size
141.5 kB

Fabricante
BSI
Brilliance Semiconductor BSI

n DESCRIPTION
The BS616UV4016 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates form a wide range of 1.8V to 3.6V supply voltage.


FEATURES
• Wide VCC operation voltage :
    C-grade : 1.8V ~ 3.6V
    I-grade : 1.9V ~ 3.6V(VCC_min.=1.65V at 25°C)
• Ultra low power consumption :
    VCC = 2.0V C-grade : 10mA(Max.) operating current
                        I-grade : 12mA(Max.) operating current
                        0.3uA (Typ.) CMOS standby current
    VCC = 3.0V C-grade : 13mA(Max.) operating current
                        I-grade : 15mA(Max.) operating current
                        0.45uA (Typ.) CMOS standby current
• High speed access time :
    -85 85ns (Max.)
    -10 100ns (Max.)
• Automatic power down when chip is deselected
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin.
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.2V

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Número de pieza
componentes Descripción
PDF
Fabricante
Ultra Low Power 256k x 16 CMOS SRAM ( Rev : 2001 )
Ver
G-Link Technology
Ultra Low Power 256k x 16 CMOS SRAM
Ver
G-Link Technology
Ultra Low Power 256k x 16 CMOS SRAM
Ver
G-Link Technology
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
Ver
Brilliance Semiconductor
256K X 16 BIT LOW POWER CMOS SRAM
Ver
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Ver
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Ver
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Ver
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Ver
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Ver
Utron Technology Inc

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