Description :
The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.
This device has an automatic power – down mode feature when deselected. Separate Byte Enable controls ( BLE and BHE ) allow individual bytes to be accessed. BLE controls the lower bits I/O0 – I/O7. BHE controls the upper bits I/O8 – I/O15.
Writing to these devices is performed by taking Chip Enable CE1 with Write Enable WE and byte Enable ( BLE / BHE ) Low while CE2 remains HIGH.
Reading from the device is performed by taking Chip Enable CE1 with Output enable OE and byte Enable ( BLE / BHE ) Low while Write Enable WE and CE2 are held HIGH.

FEATUREs :
* Low-power consumption.
   -Active: 30mA Icc at 120ns.
   -Stand by :
      20 μA (CMOS input / output , LL)
      5 μA (CMOS input / output, SL)
* Single +2.3V to 2.7V Power Supply.
* Equal access and cycle time.
* 120 ns access time.
* Tri-state output.
* Automatic power-down when deselected.
* Multiple center power and ground pins for improved noise immunity.
* Individual byte controls for both Read and Write cycles.
* Industrial grade (-40°C ~ 85°C) available.
* Available in 48-fpBGA/44L TSOPII.
* CE2 pin available for fpBGA only.