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CP312 Hoja de datos - Central Semiconductor

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Número de pieza
CP312

Other PDF
  2004  

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page
2 Pages

File Size
465.9 kB

Fabricante
Central-Semiconductor
Central Semiconductor Central-Semiconductor

PROCESS DETAILS
   Process                              EPITAXIAL PLANAR
   Die Size                             70 x 70 MILS
   Die Thickness                    9.0 MILS
   Base Bonding Pad Area    11.4 x 18.1 MILS
   Emitter Bonding Pad Area 13.8 x 23.6 MILS
   Top Side Metalization         Al - 30,000Å
   Back Side Metalization       Ti/Ni/Ag - 11,300Å


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