CPD06 Hoja de datos - Central Semiconductor
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CPD06
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2 Pages
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390.1 kB
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Central Semiconductor
PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 89 x 89 MILS
Die Thickness 10.2 MILS
Anode Bonding Pad Area 66 x 66 MILS
Top Side Metalization Ni/Au - 5,000Å/2,000Å
Back Side Metalization Ni/Au - 5,000Å/2,000Å
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