10 W SiC RF Power MESFET Die

Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater power density and wider bandwidths compared to Si and GaAs transistors. 

FEATURES
• 15 dB Small Signal Gain
• 10 W Minimum P1dB
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 5 GHz Operation
• High Efficiency

APPLICATIONS
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, AB Amplifiers
• TDMA, EDGE, CDMA and W-CDMA
• Broadband Amplifiers
• MMDS