60 W, SiC RF Power MESFET

Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power Metal Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power density, and wider bandwidths compared to Si and GaAs transistors.

FEATURES
• 13 dB Small Signal Gain
• High Efficiency
• 50 W minimum P1dB
• Up to 2400 MHz Operation
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation

APPLICATIONS
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, A/B Amplifiers
• TDMA, EDGE, CDMA, W-CDMA
• Broadband Amplifiers
• MMDS