DMG4712SSS(2010) Hoja de datos - Diodes Incorporated.
Número de pieza
DMG4712SSS
componentes Descripción
Other PDF
PDF
page
6 Pages
File Size
148 kB
Fabricante
Diodes Incorporated.
Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temperature
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic SiMFET Technology to Increase
Conversion Efficiency
• UIS Tested, RG Tested
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Número de pieza
componentes Descripción
PDF
Fabricante
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE ( Rev : 2010 )
Diodes Incorporated.
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE ( Rev : 2018 )
Diodes Incorporated.
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE ( Rev : 2010 )
Diodes Incorporated.
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