Description
This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

FEATUREs
• DIOFET Utilizes a Unique Patented Process to Monolithically
   Integrate a MOSFET and a Schottky in a Single Die to Deliver:
   ◾ Low RDS(ON) – Minimize Conduction Losses
   ◾ Low VSD – Reducing The Losses Due to Body Diode
      Conduction
   ◾ Low Qrr – Lower Qrr of the Integrated Schottky Reduces
      Body Diode Switching Losses
   ◾ Low Gate Capacitance (Qg/Qgs) Ratio – Reduces Risk of
      Shoot Through or Cross Conduction Currents at High
      Frequencies
• Small Form Factor Thermally Efficient Package Enables Higher
   Density End Products
• Occupies just 33% of the Board Area Occupied by SO-8, Enabling
   Smaller End Product
• 100% UIS (Avalanche) Rated
• 100% Rg Tested
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• Backlighting
• Power Management Functions
• DC-DC Converters