Low Distortion GaAs Power FET
• NON-HERMETIC 100MIL METAL FLANGE PACKAGE
• +23.0dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY