EFA160A Hoja de datos - Excelics Semiconductor, Inc.
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EFA160A
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• +29.0dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE
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