General Description
This  P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V –25V).

FEATUREs
·  –40A, –30 V.  RDS(ON)= 20 mW@ VGS= –10 V
                     RDS(ON)= 30 mW@ VGS= –4.5 V
·  Fast switching speed
·  High performance trench technology for extremely low RDS(ON)
·  High power and current handling capability