General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

FEATUREs
· –5.3 A, –30 V RDS(ON) = 50 mW @ VGS = –10 V
                   RDS(ON) = 80 mW @ VGS = –4.5 V
· Low gate charge
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability

APPLICATIONs
· Power management
· Load switch
· Battery protection