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GP200MHS12 Hoja de datos - Dynex Semiconductor

GP200MHS12 image

Número de pieza
GP200MHS12

componentes Descripción

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page
10 Pages

File Size
96.3 kB

Fabricante
Dynex
Dynex Semiconductor Dynex

The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.


FEATURES
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction


APPLICATIONS
■ High Power Inverters
■ Motor Controllers
■ Induction Heating
■ Resonant Converters

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Número de pieza
componentes Descripción
PDF
Fabricante
Half Bridge IGBT Module ( Rev : 2004 )
Ver
Dynex Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor
“HALF-BRIDGE” IGBT MODULE
Ver
SemiWell Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor
“HALF-BRIDGE” IGBT Module
Ver
SemiWell Semiconductor
“HALF-BRIDGE” IGBT MODULE
Ver
SemiWell Semiconductor
Half Bridge IGBT Module
Ver
Dynex Semiconductor

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