GT10J312 Hoja de datos - Toshiba
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GT10J312
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Toshiba
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
● Third-generation IGBT
● Enhancement mode type
● High speed : tf = 0.30μs (Max.)
● Low saturation voltage : VCE (sat) = 2.7V (Max.)
● FRD included between emitter and collector
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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