GT60M303(2002) Hoja de datos - Toshiba
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GT60M303
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Toshiba
HIGH POWER SWITCHING APPLICATIONS
● The 4th Generation
● FRD Included Between Emitter and Collector
● Enhancement−Mode
● High Speed
IGBT : tf = 0.25µs (TYP.)
FRD : trr = 0.7µs (TYP.)
● Low Saturation Voltage : VCE (sat) = 2.1V (TYP.)
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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