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HIP0061AS2 Hoja de datos - Intersil

HIP0061 image

Número de pieza
HIP0061AS2

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Intersil
Intersil Intersil

Description
The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device performance and ruggedness.
The HIP0061 is designed to integrate three power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Lamps, Solenoids and Resistive Loads.


FEATUREs
• Three 3.5A Power MOS N-Channel Transistors
• Output Voltage to 60V
• rDS(ON) . . . . . 0.225Ω Max Per Transistor at VGS = 10V
• Pulsed Current . . . . . . . . . . . . . . . .10A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation


APPLICATIONs
• Automotive
• Appliance
• Industrial Control
• Robotics
• Relay, Solenoid, Lamp Drivers

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Número de pieza
componentes Descripción
PDF
Fabricante
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
Ver
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
Ver
HY ELECTRONIC CORP.
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2007 )
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
Ver
HY ELECTRONIC CORP.
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
Ver
PANJIT INTERNATIONAL

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