[HANBit Electronics Co.,Ltd]

GENERAL DESCRIPTION
The HMN1288D Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytesby 8 bits. The HMN1288D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cyclesof standard SRAM and integral control circuitry, which constantly monitors the single 5V, supply for an out-of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMN1288D uses extremely low standby current CMOS SRAM’ s, coupled with small lithium coin cells to provide non volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES
Access time : 70, 85, 120, 150 ns
High-density design : 1Mbit Design
Battery internally isolated until power is applied
Industry-standard 32-pin 128K x 8 pinout
Unlimited write cycles
Data retention in the absence of VCC
10-years minimum data retention in absence of power
Automatic write-protection during power-up/power-down cycles
Data is automatically protected during power loss
Conventional SRAM operation; unlimited write cycles