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IHW25N120E1 Hoja de datos - Infineon Technologies

IHW25N120E1 image

Número de pieza
IHW25N120E1

Other PDF
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page
14 Pages

File Size
1.8 MB

Fabricante
Infineon
Infineon Technologies Infineon

Features:
• Powerful monolithic body diode with low forward voltage
   designed for soft commutation only
• TRENCHSTOP™ technology offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
   - low VCEsat
   - easy parallel switching capability due to positive
      temperature coefficient in VCEsat
• Low EMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
   //www.infineon.com/igbt/


APPLICATIONs:
• Induction cooking
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications


Número de pieza
componentes Descripción
PDF
Fabricante
Reverse-Conducting IGBT with monolithic body diode
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Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
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Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
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Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
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Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Ver
Infineon Technologies

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