IHW30N100R Hoja de datos - Infineon Technologies
Número de pieza
IHW30N100R
componentes Descripción
Other PDF
PDF
page
12 Pages
File Size
322.7 kB
Fabricante
Infineon Technologies
Features:
• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
APPLICATIONs:
• Microwave Oven
• Soft Switching Applications
Número de pieza
componentes Descripción
PDF
Fabricante
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Infineon Technologies
Share Link: