Avalanche Energy Rated N-Channel Power MOSFETs

The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transistors deslgnedfor appI ications such asswitchi ng regulators, switching converters, motor drivers,relay drivers,anddrivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.
The IRF-types are supplied in the JEDEC TO-204AE steel package.

FEATUREs:
■ Single pulse avalanche energy rated
■ SOX Ispower-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High Input Impedance