VDSS = 100V
RDS(on) = 18mΩ
ID = 59A

Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

FEATUREs
 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free
 Halogen-Free