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IRF510 Hoja de datos - New Jersey Semiconductor

IRF510 image

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IRF510

componentes Descripción

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2 Pages

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105.4 kB

Fabricante
NJSEMI
New Jersey Semiconductor NJSEMI

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.


FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Easeof Paralleling
• Simple Drive Requirements


Número de pieza
componentes Descripción
PDF
Fabricante
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR
Ver
International Rectifier

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