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IRF5800(2000) Hoja de datos - International Rectifier

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IRF5800

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8 Pages

File Size
92 kB

Fabricante
IR
International Rectifier IR

Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

● Ultra Low On-Resistance
● P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Low Gate Charge

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