Description
The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

• RoHs Compliant Containing No Lead and Bromide
• Integrated Monolithic Schottky Diode
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible 
• Ultra Low Package Inductance
• Optimized for High Frequency Switching 
• Ideal for CPU Core DC-DC Converters
• Optimized for Sync. FET socket of Sync. Buck Converter
• Low Conduction and Switching Losses
• Compatible with existing Surface Mount Techniques 
• 100% Rg tested