Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
◾ RoHs Compliant Containing No Lead and Bromide
◾ Integrated Monolithic Schottky Diode
◾ Low Profile (<0.7 mm)
◾ Dual Sided Cooling Compatible
◾ Low Package Inductance
◾ Optimized for High Frequency Switching
◾ Ideal for CPU Core DC-DC Converters
◾ Optimized for Sync. FET socket of Sync. Buck Converter
◾ Low Conduction and Switching Losses
◾ Compatible with existing Surface Mount Techniques
◾ 100% Rg tested