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IRF7103Q Hoja de datos - International Rectifier

F7103Q image

Número de pieza
IRF7103Q

componentes Descripción

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page
10 Pages

File Size
160.3 kB

Fabricante
IR
International Rectifier IR

AUTOMOTIVE MOSFET

Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.


Benefits
● Advanced Process Technology
● Dual N-Channel MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Repetitive Avalanche Allowed up to Tjmax
● Automotive [Q101] Qualified

Typical Applications
● Anti-lock Braking Systems (ABS)
● Electronic Fuel Injection
● Power Doors, Windows & Seats

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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