Fabricante
![SILIKRON](/logo/SILIKRON.png)
Silikron Semiconductor Co.,LTD.
![SILIKRON](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
The IRF830 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in
Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Application
■ High current, high speed switching
■ Lighting
■ Ideal for off-line power supply, adaptor, PFC
Número de pieza
componentes Descripción
PDF
Fabricante
N - CHANNEL 500V - 1.35Ω- 4.5A - TO-220 PowerMESH™ MOSFET
STMicroelectronics
N-Channel 500V-1.35 Ω - 4.5A – TO-220 PowerMESH™ MOSFET
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL 500V - 0.55Ω - 10.6A - TO-220/TO-220FP PowerMESH™ MOSFET
STMicroelectronics
N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET
STMicroelectronics
4.5A 500V N CHANNEL POWER MOSFET
First Components International
N-CHANNEL 500V - 3Ω - 2.8A TO-220 PowerMesh™II MOSFET
STMicroelectronics
N - CHANNEL 500V - 2.5 Ω - 2.5 A - TO-220 PowerMESH MOSFET
STMicroelectronics
N-CHANNEL 500V - 0.48Ω - 10A - TO-220/TO-220FP PowerMESH™ MOSFET
STMicroelectronics
4.5A 500V N CHANNEL POWER MOSFET
First Components International
N-CHANNEL 500V PowerMESH MOSFET
STMicroelectronics