IRF830 Hoja de datos - STMicroelectronics
Número de pieza
IRF830
componentes Descripción
Other PDF
no available.
PDF
page
8 Pages
File Size
83.4 kB
Fabricante
STMicroelectronics
DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on)= 1.35Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
Número de pieza
componentes Descripción
PDF
Fabricante
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
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