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IRFI820G Hoja de datos - International Rectifier

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IRFI820G

componentes Descripción

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A

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International Rectifier

IRFI820G

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Número de pieza

componentes Descripción

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HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A

International Rectifier

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A

International Rectifier

HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A

International Rectifier

HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A

International Rectifier

HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A

International Rectifier

HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A

International Rectifier

HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A

International Rectifier

HEXFET power MOSFET. VDSS = 450V, RDS(on) = 0.63 Ohm, ID = 4.9 A

International Rectifier

Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)

International Rectifier

HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A

International Rectifier

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