IRFIBE30 - International Rectifier Hoja de datos - DataSheetBank

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IRFIBE30 Hoja de datos - International Rectifier

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IRFIBE30

componentes Descripción

HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A

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International Rectifier

HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A

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componentes Descripción

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Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)

International Rectifier

HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)

International Rectifier

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A

International Rectifier

HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A

International Rectifier

HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A

International Rectifier

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A

International Rectifier

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A

International Rectifier

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

International Rectifier

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A

International Rectifier

HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A

International Rectifier

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