Número de pieza
componentes Descripción
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Fabricante
HEXFET® Power MOSFET (Vdss=400V/ Rds(on)=0.55Ω / Id=5.4A)
International Rectifier
HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A
International Rectifier
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
International Rectifier
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
HEXFET Power MOSFET Vdss=-55V, Rds(on)=0.06ohm,Id=-31A
International Rectifier
HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A
International Rectifier
HEXFET® Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
Kersemi Electronic Co., Ltd.
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A
International Rectifier
HEXFET® Power MOSFET VDSS= 55V RDS(on)= 0.016Ω ID= 36A
International Rectifier
