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IRFM260(1996) Hoja de datos - International Rectifier

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Número de pieza
IRFM260

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8 Pages

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261.3 kB

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IR
International Rectifier IR

200Volt, 0.060Ω, HEXFET

HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required.


FEATUREs:
◾ Hermetically Sealed
◾ Electrically Isolated
◾ Simple Drive Requirements
◾ Ease of Paralleling
◾ Ceramic Eyelet


Número de pieza
componentes Descripción
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR ( Rev : 1998 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : V2 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR
Ver
International Rectifier

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