100 Volt, 0.028Ω, HEXFET

Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

FEATUREs:
■ Surface Mount
■ Small Footprint
■ Alternative to TO-3 Package
■ Hermetically Sealed
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Lightweight