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IRFR210 Hoja de datos - International Rectifier

IRFR210 image

Número de pieza
IRFR210

Other PDF
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page
6 Pages

File Size
170.5 kB

Fabricante
IR
International Rectifier IR

DESCRIPTION
Third Generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
Ver
International Rectifier
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A
Ver
International Rectifier
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
Ver
Vishay Semiconductors
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
Ver
International Rectifier
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
Ver
International Rectifier
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
Ver
International Rectifier
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
Ver
International Rectifier
HEXFET Power MOSFET Vdss=-55V, Rds(on)=0.06ohm,Id=-31A
Ver
International Rectifier
HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A
Ver
International Rectifier

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