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IRFR5410TRR Hoja de datos - Kersemi Electronic Co., Ltd.

IRFR5410TRL image

Número de pieza
IRFR5410TRR

componentes Descripción

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page
10 Pages

File Size
762.7 kB

Fabricante
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI

Description
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


FEATUREs
● Advanced Planar Technology
● P-Channel MOSFET
● Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to
   Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *


Número de pieza
componentes Descripción
PDF
Fabricante
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
International Rectifier
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
International Rectifier
AUTOMOTIVE GRADE
Ver
International Rectifier
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
International Rectifier
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
Kersemi Electronic Co., Ltd.
AUTOMOTIVE GRADE
Ver
Infineon Technologies

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