datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  International Rectifier  >>> IRFR9120N PDF

IRFR9120N Hoja de datos - International Rectifier

IRFR9120N image

Número de pieza
IRFR9120N

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
104.5 kB

Fabricante
IR
International Rectifier IR

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR9120N)
● Straight Lead (IRFU9120N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated

 

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
POWER MOS7® MOSFET
Ver
Advanced Power Technology
HEXFET®Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
New Jersey Semiconductor
HEXFET® Power MOSFET
Ver
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
Ver
International Rectifier
HEXFET® Power MOSFET
Ver
International Rectifier

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]