Número de pieza
componentes Descripción
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Fabricante
HEXFET® Power MOSFET (Vdss=400V/ Rds(on)=0.55Ω / Id=5.4A)
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
HEXFET® Power MOSFET VDSS = 400V RDS(ON)=0.55 Ω ID=5.7A
International Rectifier
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
Power MOSFET(Vdss=30V/ Rds(on)=3.3mohm/ Id=75A)
International Rectifier
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=35A)
International Rectifier
