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IRFU320 Hoja de datos - International Rectifier

IRFR320 image

Número de pieza
IRFU320

Other PDF
  no available.

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page
6 Pages

File Size
177 kB

Fabricante
IR
International Rectifier IR

DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR320)
• Straight lead (IRFU320)
• Available in tape and reel
• Fast switching
• Ease of paralleling

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
Ver
International Rectifier
HEXFET Power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ω, ID = -3.1A
Ver
International Rectifier
HEXFET® Power MOSFET (Vdss=400V/ Rds(on)=0.55Ω / Id=5.4A)
Ver
International Rectifier
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
Ver
International Rectifier

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