IRFU9220 Hoja de datos - International Rectifier
Número de pieza
IRFU9220
componentes Descripción
Other PDF
no available.
PDF
page
6 Pages
File Size
168.3 kB
Fabricante
International Rectifier
DESCRIPTION
The HEXFE technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220)
• Straight Lead (IRFUFU9220)
• Available in Tape & Reel
• P-Channel
• Fast Switching
Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
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