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IRS2109PBF Hoja de datos - Infineon Technologies

IRS2109 image

Número de pieza
IRS2109PBF

componentes Descripción

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page
27 Pages

File Size
591.5 kB

Fabricante
Infineon
Infineon Technologies Infineon

Description
The IRS2109/IRS21094 are high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.


FEATUREs
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt
   immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High-side output in phase with IN input
• Logic and power ground +/- 5 V offset.
• Internal 540 ns deadtime, and programmable
   up to 5 µs with one external RDT resistor (IRS21094)
• Lower di/dt gate driver for better noise immunity
• Shutdown input turns off both channels.
• RoHS compliant

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Número de pieza
componentes Descripción
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