Description
The IRS2608D(S) is a high voltage, high speed power MOSFET an IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or 1GBT in the high side configuration which operates up to 600 V.

FEATUREs
• Floating channel designed for bootstrap operation
    Fully operational to +600 V
    Tolerant to negative transient voltage – dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V and 15 V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with HIN input
• Low side output out of phase with LIN input
• Internal 530 ns dead-time
• Lower di/dt gate driver for better noise immunity
• Integrated bootstrap diode
• Suitable for both trapezoidal and sinusoidal motor control
• RoHS compliant

APPLICATIONs:
* Air Conditioner
* Micro/Mini Inverter Drives
* General Purpose Inverters
* Motor Control