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IS42S16800E-6TL Hoja de datos - Integrated Silicon Solution

IS42S16800E image

Número de pieza
IS42S16800E-6TL

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page
61 Pages

File Size
765 kB

Fabricante
ISSI
Integrated Silicon Solution ISSI

OVERVIEW
ISSI's 128Mb Synchronous DRAM  achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.


FEATURES
•  Clock frequency: 200, 166, 143, 133 MHz
•  Fully synchronous; all signals referenced to a positive clock edge
•  Internal bank for hiding row access/precharge
•  Power supply
                      Vdd Vddq
  IS42S81600E   3.3V  3.3V  
  IS42S16800E   3.3V  3.3V  
•  LVTTL interface
•  Programmable burst length – (1, 2, 4, 8, full page)
•  Programmable burst sequence: Sequential/Interleave
•  Auto Refresh (CBR)
•  Self Refresh
•  4096 refresh cycles every 64 ms
•  Random column address every clock cycle
•  Programmable CAS latency (2, 3 clocks)
•  Burst read/write and burst read/single write operations capability
•  Burst termination by burst stop and precharge command
•  Industrial  Temperature Availability

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
128Mb Synchronous DRAM
Ver
Nanya Technology
8M x 8 bit Synchronous DRAM Series
Ver
Hynix Semiconductor
SYNCHRONOUS DRAM 128Mb: x4, x8, x16 SDRAM 3.3V
Ver
Unspecified
4M x 32 128Mb SYNCHRONOUS DRAM
Ver
Integrated Silicon Solution
Synchronous DRAM 8M x 8 Bit x 4 Banks
Ver
A-Data Technology
Synchronous DRAM 8M x 8 Bit x 4 Banks
Ver
A-Data Technology
8Mx16 128Mb DDR Synchronous DRAM
Ver
Integrated Silicon Solution
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
Ver
Integrated Silicon Solution
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
Ver
Integrated Silicon Solution
4 Banks x 8M x 8Bit Synchronous DRAM
Ver
Hynix Semiconductor

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