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IS62VV25616LL-10T Hoja de datos - Integrated Silicon Solution

IS62VV25616LL image

Número de pieza
IS62VV25616LL-10T

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page
10 Pages

File Size
77.3 kB

Fabricante
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS62VV25616L and IS62VV25616LL are high-speed, 4,194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.


FEATURES
• High-speed access time: 70, 85, 100 ns
• CMOS low power operation
    – 36 mW (typical) operating
    – 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 1.65V-1.95V VCC power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (7.2mm x 8.7mm)

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Número de pieza
componentes Descripción
PDF
Fabricante
256K x 16 1.8V ULTRA LOW POWER CMOS STATIC RAM
Ver
Integrated Circuit Solution Inc
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Ver
Integrated Circuit Solution Inc
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Ver
Integrated Silicon Solution
512K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
Ver
Integrated Silicon Solution
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Ver
Integrated Silicon Solution
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
Ver
Integrated Silicon Solution
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 
Ver
Integrated Silicon Solution
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Ver
Integrated Silicon Solution
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Ver
Integrated Circuit Solution Inc
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM ( Rev : 2009 )
Ver
Integrated Silicon Solution

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