DESCRIPTION
TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation
   36 mW (typical) operating
   9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
   1.65V--2.2V VDD (IS62WV25616ALL)
   2.5V--3.6V VDD (IS62WV25616BLL)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available