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ISL9R18120S3S_Q(2014) Hoja de datos - Fairchild Semiconductor

ISL9R18120G2 image

Número de pieza
ISL9R18120S3S_Q

componentes Descripción

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page
9 Pages

File Size
1.3 MB

Fabricante
Fairchild
Fairchild Semiconductor Fairchild

Description
The ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
   
Features
• Stealth Recovery trr = 300 ns (@ IF = 18 A)
• Max Forward Voltage, VF = 3.3 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
   
Applications
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
   

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